A breakthrough and a pioneering error correction technique in the data transmission process, possibly holds a key to the future of non-volatile memories in next-generation of computers. Termed as Spin-torque transfer magnetic random access memory (STT-MRAM), the improved error correction technique in STT-MRAM showed increased tolerance towards fluctuations in electrical resistance of devices, which could aid in smoother device manufacturing  process and super-fast device boot-up times. And STT-MRAM promises scalability and cost-efficiency.

Via [Science Daily]

With a designed imager chip, mobile phones turn into devices that could see through most solid objects like walls and plastic. This comprises of two scientific advances, one involves tapping into an unused range of an electromagnetic spectrum and the other being a new microchip technology.

Via [University Of Texas, Dallas]

A new improvement to the existing  jet-injection technology breaches the skin at the speed of sound, without any use of needles.

Via [MIT]