A breakthrough and a pioneering error correction technique in the data transmission process, possibly holds a key to the future of non-volatile memories in next-generation of computers. Termed as Spin-torque transfer magnetic random access memory (STT-MRAM), the improved error correction technique in STT-MRAM showed increased tolerance towards fluctuations in electrical resistance of devices, which could aid in smoother device manufacturing process and super-fast device boot-up times. And STT-MRAM promises scalability and cost-efficiency.
